TY  - JOUR
T1  - Improvement in dielectric properties of ZrO2 thin film by employing a Zr precursor with enhanced thermal stability in high-temperature atomic layer deposition
AU  - Choi, Yoona
AU  - Lee, Ae Jin
AU  - Park, Jongwook
AU  - Oh, Hansol
AU  - Park, Yongjoo
AU  - Jeon, Woojin
JO  - Materials Today Communications
VL  - 40
SP  - 109735
PY  - 2024
DA  - 2024/08/01/
SN  - 2352-4928
DO  - https://doi.org/10.1016/j.mtcomm.2024.109735
UR  - https://www.sciencedirect.com/science/article/pii/S2352492824017161
KW  - Atomic layer deposition
KW  - Dielectric constant
KW  - Capacitor
KW  - Zirconium oxide
KW  - Precursor
KW  - Thermal stability
AB  - This study explores the challenges associated with the shrinking design rules of dynamic random access memory (DRAM) technology, particularly focusing on the degradation of crystallinity in ZrO2 insulators within metal-insulator-metal (MIM) capacitors. To mitigate these challenges, a novel high-temperature atomic layer deposition (ALD) process for ZrO2 is developed, utilizing a newly engineered Zr precursor to enhance thermal stability. Through comprehensive analyses, including thermogravimetric analysis (TGA), differential scanning calorimetry (DSC), and thin film growth behavior investigations, the efficacy of the high-temperature ALD process in achieving ZrO2 thin films with superior crystallinity at process temperatures up to 400 °C was demonstrated. Moreover, X-ray photoelectron spectroscopy (XPS) depth-profile analyses reveal insights into the compositional variations in deposited thin films, while electrical property evaluations in metal-insulator-metal (MIM) capacitor structures highlight the significance of crystallinity enhancement for achieving high dielectric constant of 48.1.
ER  -